GlobalFoundries will receive $30 million in federal funds to develop and produce next-gen gallium nitride on silicon chips at a Vermont GF fab.
GaN chips handle heat and power better than other chips, giving them better performance for EVs, 5G and 6G smartphones, RF wireless gear and other advanced tech.
US Sen. Patrick Leahy, GF CEO Thomas Caulfield and other officials made the announcement Monday at Essex Junction, Vermont. Leahy worked to secure the funds from the 2022 consolidated appropriations act. The funds will be used to buy tools and further develop 200mm GaN wafer manufacturing.
Caulfield said there is potential for further support in the 2023 federal budget. “GF is well-positioned to become a global leader in GaN chip manufacturing—right here in Vermont,” he said.
About 2,000 GF workers are employed at the Essex Junction site, producing more than 600,000 wafers a year.
The fab works in partnership with the US Department of Defense as a Trusted Foundry, making chips used in sensitive aerospace and defense systems.
DOD’s Trusted Access Program Office was the agent used to secure the funds. TAPO’s primary mission is to procure advanced chips for sensitive weapon systems and TAPO supports both civilian and military GaN on silicon as a stable semiconductor for high power, high frequency devices.
In August, GF announced an extension of a long-term agreement with Qualcomm to secure a supply of GF’s FinFET transistors through 2028. In July, GF and STMicroelectronics announced a 300mm wafer facility in France to support GF’s FDX technology and ST’s roadmap for 18nm chips for automotive, industrial, IoT and communications.
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